Title :
Simulation and fabrication of InGaAs planar Gunn diode on InP substrate
Author :
Papageorgiou, V. ; Khalid, Amir ; Chong Li ; Cumming, David R. S.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
This paper describes the simulation and fabrication of the first planar Gunn diode based on InGaAs on InP substrate. Gunn devices were simulated using the Sentaurus Device software. The fabricated planar Gunn diodes are 1.3 μm long and 120 micron wide and the measured and simulated results are in excellent agreement.
Keywords :
Gunn diodes; III-V semiconductors; gallium arsenide; indium compounds; millimetre wave diodes; InGaAs; InP; Sentaurus device software; millimetre-wave planar Gunn diodes; size 1.3 mum; Current measurement; Fabrication; Indium phosphide; Mathematical model; Semiconductor device measurement; Semiconductor device modeling; Substrates; Gunn diode; mm-wave devices; simulation;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562607
