High-speed directly modulated laser for applications beyond 100GbE

Author

Kobayashi, Wataru ; Fujisawa, T. ; Ito, Takao ; Yamanaka, T. ; Shibata, Yoshitaka ; Tadokoro, T. ; Sanjoh, H.

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

Recent results are reported for a 1.3-μm InGaAlAs directly modulated laser (DML) with a ridge waveguide structure. We realized a 3-dB-down electrical-to-optical (E/O) response of 34 GHz for a 150-μm DML. Clear eye openings were obtained at 43 Gb/s up to 60°C and at 50 Gb/s at 25°C.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; quantum well lasers; ridge waveguides; waveguide lasers; DML; E/O response; InGaAlAs; bit rate 43 Gbit/s; bit rate 50 Gbit/s; electrical-to-optical response; eye openings; frequency 34 GHz; high-speed directly modulated laser; multiple quantum-well distributed feedback laser; ridge waveguide structure; size 150 mum; temperature 25 degC; wavelength 1.3 mum; Cavity resonators; Distributed feedback devices; Modulation; Optical waveguides; Photonics; Quantum well devices; Waveguide lasers; Direct modulation; multiple quantum-well distributed feedback laser; ridge waveguide;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562613

Filename

6562613