Title :
High-speed directly modulated laser for applications beyond 100GbE
Author :
Kobayashi, Wataru ; Fujisawa, T. ; Ito, Takao ; Yamanaka, T. ; Shibata, Yoshitaka ; Tadokoro, T. ; Sanjoh, H.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
Recent results are reported for a 1.3-μm InGaAlAs directly modulated laser (DML) with a ridge waveguide structure. We realized a 3-dB-down electrical-to-optical (E/O) response of 34 GHz for a 150-μm DML. Clear eye openings were obtained at 43 Gb/s up to 60°C and at 50 Gb/s at 25°C.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; quantum well lasers; ridge waveguides; waveguide lasers; DML; E/O response; InGaAlAs; bit rate 43 Gbit/s; bit rate 50 Gbit/s; electrical-to-optical response; eye openings; frequency 34 GHz; high-speed directly modulated laser; multiple quantum-well distributed feedback laser; ridge waveguide structure; size 150 mum; temperature 25 degC; wavelength 1.3 mum; Cavity resonators; Distributed feedback devices; Modulation; Optical waveguides; Photonics; Quantum well devices; Waveguide lasers; Direct modulation; multiple quantum-well distributed feedback laser; ridge waveguide;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562613
