DocumentCode
621046
Title
1480nm InGaAsP LOC broad-area-lasers with >18W pulsed output power at 20°C
Author
Fendler, D. ; Mohrle, M. ; Spiegelberg, M. ; Rehbein, W. ; Passenberg, Wolfgang ; Grote, N.
Author_Institution
Heinrich-Hertz-Inst. Berlin, Fraunhofer Inst. for Telecommun., Berlin, Germany
fYear
2013
fDate
19-23 May 2013
Firstpage
1
Lastpage
2
Abstract
1480nm InGaAsP large optical cavity broad-area laser diodes were developed and optimized for pulsed operation showing optical output power of >18W at 20°C. Furthermore the μs pulse duration regime was investigated with respect to power saturation and self-heating at elevated operating currents.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical pulse generation; optical saturation; semiconductor lasers; InGaAsP; LOC broad-area-lasers; elevated operating currents; large optical cavity broad-area laser diodes; optical output power; power saturation; pulsed operation; self-heating; temperature 20 degC; wavelength 1480 nm; Diode lasers; Optical device fabrication; Optical fibers; Optical pulses; Optical saturation; Power generation; InGaAsP; NIR; high power; semiconductor laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location
Kobe
ISSN
1092-8669
Print_ISBN
978-1-4673-6130-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2013.6562617
Filename
6562617
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