Title :
Design of multi-functional GaInAsP/Si hybrid semiconductor optical amplifier array with AlInAs-oxide current confinement layer
Author :
Hayashi, Yasuhiro ; Fukuda, Kenji ; Osabe, Ryo ; Suzuki, Jun-ichi ; Atsumi, Yuki ; JoonHyun Kang ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; laser tuning; semiconductor laser arrays; semiconductor optical amplifiers; silicon; wafer bonding; waveguide lasers; GaInAsP-Si; III-V/Si hybrid technique; III-V/Si wafer bonding; current confinement layer; gain characteristics; multifunctional SOA array; multifunctional hybrid semiconductor optical amplifier array; waveguide width tuning; Optical device fabrication; Optical saturation; Optical waveguides; Semiconductor optical amplifiers; Silicon; AlInAs oxidation; III–V/Si hybrid integration; Semiconductor optical amplifier; Si photonics;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562621
