Title :
AlGaInAs selective area growth for high-speed EAM-based PIC sources
Author :
Decobert, Jean ; Lagree, Pierre-Yves ; Guerault, Hugues ; Kazmierski, C.
Author_Institution :
III-V Lab., Marcoussis, France
Abstract :
We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and characterized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium compounds; high-speed integrated circuits; indium compounds; integrated optics; semiconductor quantum wells; AlGaInAs-InP; active function heterostructures; bandgap engineering; electro-absorption modulators; generic integration platform; high-speed EAM-based PIC sources; multiple quantum wells material; passive function heterostructures; photonic integrated circuits; selective area growth; Integrated circuit modeling; Materials; Phase shift keying; Photonic band gap; Quantum well devices; Waveguide lasers; AlGaInAs multiple quantum wells (MQW); Electro-absorption Modulators; MOVPE; Photonic Integrated Circuit (PIC); Selective Area Growth (SAG);
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562625
