AlGaInAs selective area growth for high-speed EAM-based PIC sources

Author

Decobert, Jean ; Lagree, Pierre-Yves ; Guerault, Hugues ; Kazmierski, C.

Author_Institution

III-V Lab., Marcoussis, France

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and characterized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium compounds; high-speed integrated circuits; indium compounds; integrated optics; semiconductor quantum wells; AlGaInAs-InP; active function heterostructures; bandgap engineering; electro-absorption modulators; generic integration platform; high-speed EAM-based PIC sources; multiple quantum wells material; passive function heterostructures; photonic integrated circuits; selective area growth; Integrated circuit modeling; Materials; Phase shift keying; Photonic band gap; Quantum well devices; Waveguide lasers; AlGaInAs multiple quantum wells (MQW); Electro-absorption Modulators; MOVPE; Photonic Integrated Circuit (PIC); Selective Area Growth (SAG);

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562625

Filename

6562625