Title :
Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique
Author :
Matsushita, Akira ; Matsumoto, Akiyoshi ; Akahane, Kouichi ; Matsushima, Y. ; Utaka, K.
Author_Institution :
Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan
Abstract :
We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; indium compounds; mixing; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; spectral line shift; sputter deposition; InAs-InGaAlAs; InP; InP (311)B substrate; MBE; annealing; highly-stacked quantum dot structures; low temperature intermixing; molecular beam epitaxial growth; monolithic integrated circuits; photoluminescence spectral blue-shift; sputtering; temperature 650 degC; Annealing; Films; Indium phosphide; Photonics; Sputtering; Substrates; InAs/InGaAlAs; PL wavelength; intermixing; quantum dots;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562629
