• DocumentCode
    621061
  • Title

    Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs

  • Author

    Kim, S.H. ; Yokoyama, Masafumi ; Nakane, Ryosho ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Takenaka, Mitsuru ; Takagi, Shinichi

  • Author_Institution
    Univ. of Tokyo, Tokyo, Japan
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.
  • Keywords
    III-V semiconductors; MOSFET; electromagnetic wave scattering; electron mobility; gallium arsenide; indium compounds; semiconductor device models; InGaAs; MOS interface; MOSFET; channel thickness fluctuation scattering; electron mobility; Buffer layers; Fluctuations; Logic gates; MOSFET; Scattering; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
  • Conference_Location
    Kobe
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4673-6130-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2013.6562632
  • Filename
    6562632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=621061