Improvement in nonlinear characteristics of zero bias GaAsSb-based backward diodes

Author

Takahashi, Tatsuro ; Sato, Mitsuhisa ; Nakasha, Yasuhiro ; Hara, Naoya

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

A high curvature coefficient (γ) of 49.4 V^-1 was achieved at zero bias using p-GaAsSb/i-InAlAs/n-InGaAs backward diodes that were lattice-matched to an InP substrate. γ indicates a higher value than that of ideal Schottky diodes (39.6 V^-1). Backward diodes with such a high y are applicable in mixers. The doping concentration in the p-GaAsSb layer was optimized to obtain an ideal energy band structure for a backward diode. The impedance-matched voltage sensitivity (β_v,opt) at 94 GHz was estimated to be 6,069 V/W using a diode of 3.0 μm diameter.

Keywords

III-V semiconductors; band structure; gallium arsenide; indium compounds; millimetre wave diodes; p-i-n diodes; GaAsSb-InAlAs-InGaAs; InP; frequency 94 GHz; high curvature coefficient; ideal energy band structure; impedance matched voltage sensitivity; lattice matching; nonlinear characteristic; zero bias backward diodes; Doping; Indium phosphide; Mixers; Schottky diodes; Sensitivity; Substrates; GaAsSb; backward diode; lattice match; millimeter-wave; non-linearity; sensitivity; zero bias;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562640

Filename

6562640