DocumentCode
621072
Title
Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators
Author
Egard, Mikael ; Arlelid, Mats ; Ohlsson, Lars ; Borg, B. Mattias ; Lind, Erik ; Wernersson, Lars-Erik
Author_Institution
Electr. & Inf. Technol, Lund Univ., Lund, Sweden
fYear
2013
fDate
19-23 May 2013
Firstpage
1
Lastpage
2
Abstract
Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/μm) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
Keywords
MOSFET; frequency modulation; MOSFET transconductance; center frequency; coherent wavelet; cointegration; frequency domain; frequency modulation; mm-wave MOSFET/RTD wavelet generator; oscillator circuit; power consumption; Frequency modulation; Generators; Indium gallium arsenide; Logic gates; MOSFET; Oscillators; Wavelet transforms; InGaAS MOSFET; RTD; mm-Wave circuits; wavelet generator;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location
Kobe
ISSN
1092-8669
Print_ISBN
978-1-4673-6130-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2013.6562644
Filename
6562644
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