Sub-50nm indium phosphide high electron mobility transistor technology for terahertz monolithic microwave integrated circuits and systems

Author

Sarkozy, Stephen ; Xiaobing Mei ; Yoshida, W. ; Po-Hsin Liu ; Ling-Shine Lee ; Zhou, J. ; Leong, Kevin ; Radisic, Vesna ; Deal, William ; Lai, Richard

Author_Institution

Aerosp. Syst., Northrop Grumman Corp., Redondo Beach, CA, USA

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

This paper reports on the process and technology of the sub-50nm InP HEMT MMIC process which has enabled signal amplification up to 670 GHz. In particular, considerations not commonly addressed such as the related processing requirements and uniformity of transistors to establish working chipsets are discussed. Finally, initial burn in data is presented as the technology evolves from a research and development process to production.

Keywords

III-V semiconductors; field effect MMIC; high electron mobility transistors; indium compounds; submillimetre wave amplifiers; HEMT MMIC process; InP; frequency 670 GHz; high electron mobility transistor; signal amplification; size 50 nm; terahertz monolithic microwave integrated circuits; HEMTs; Indium phosphide; MMICs; MODFETs; Microwave amplifiers; Substrates; HEMT; InP; LNA; PA; THz; Transistor; fmax; mmW;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562646

Filename

6562646