• DocumentCode
    621077
  • Title

    Comparative study on frequency limits of nanoscale HEMTs with various channel materials

  • Author

    Nagai, Yukie ; Nagai, Shuichi ; Sato, Jun ; Hara, Satoshi ; Fujishiro, Hiroki I. ; Endoh, Akira ; Watanabe, Issei ; Kasamatsu, Akifumi

  • Author_Institution
    Tokyo Univ. of Sci., Chiba, Japan
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The frequency limits in intrinsic fT of the nano-scale HEMTs with various channel materials are investigated by using the quantum-corrected Monte Carlo simulation. The device C with the InSb channel exhibits the higher intrinsic fT from the lower Vds because of the higher electron velocity. Owing to the shorter limit in the Lg scaling at the lower Vds, the device C also exhibits the higher frequency limit in the intrinsic fT, indicating its potential for the low power and THz operation.
  • Keywords
    Monte Carlo methods; high electron mobility transistors; HEMT; InSb; channel materials; electron velocity; quantum-corrected Monte Carlo simulation; Delays; HEMTs; Impact ionization; Logic gates; MODFETs; Materials; Strain; Band Calculation; Delay Time; HEMT; InAs; InGaAs; InSb; Quantum-Corrected Monte Carlo Simulation; Strain; THz; fT;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
  • Conference_Location
    Kobe
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4673-6130-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2013.6562649
  • Filename
    6562649
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=621077