Title :
SPICE level analysis of Single Event Effects in an OxRRAM cell
Author :
Castellani-Coulie, K. ; Bocquet, Michael ; Aziza, H. ; Portal, J.M. ; Rahajandraibe, W. ; Muller, Candice
Author_Institution :
IM2NP, Aix-Marseille Univ., Marseille, France
Abstract :
As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Single Event Effects in circuitry surrounding OxRRAMs. The impact of a particle crossing the circuit is presented. A threshold effect is pointed out even if the probability of SEE occurrence is shown to be low in common technologies.
Keywords :
SPICE; radiation hardening (electronics); random-access storage; OxRRAM cell; SEE occurrence probability; SPICE level analysis; nonvolatile memories; resistive switching mechanism; single-event effect; threshold effect; Computer architecture; Microprocessors; Nonvolatile memory; Portals; Random access memory; Resistance; Switches; OxRRAM; ReRAM; SEE; SPICE simulation;
Conference_Titel :
Test Workshop (LATW), 2013 14th Latin American
Conference_Location :
Cordoba
Print_ISBN :
978-1-4799-0595-9
DOI :
10.1109/LATW.2013.6562684
