DocumentCode :
621258
Title :
Optimization of a voltage sense amplifier operating in ultra wide voltage range with back bias design techniques in 28nm UTBB FD-SOI technology
Author :
Moritz, G. ; Giraud, Bastien ; Noel, Jean-Philippe ; Turgis, D. ; Grover, Anuj
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2013
fDate :
29-31 May 2013
Firstpage :
53
Lastpage :
56
Abstract :
Advanced SoC designs regularly use Dynamic Voltage and Frequency Scaling (DVFS) to achieve high performance and low power targets of portable systems. In this paper, we focus on optimization of a Voltage Sense Amplifier (VSA) in 28nm Ultra-Thin Body and BOX Fully Depleted SOI (UTBB FD-SOI) technology to achieve high performance operations over the Ultra Wide Voltage Range (UWVR) from 1.3V to 0.4V. We use Flip-Well design methodology along with forward body bias modulation to extend operation range of the VSA and also reduce sense amplifier read time by 28%, while saving power consumption by up to 59% compared to Bulk technology.
Keywords :
amplifiers; integrated circuit design; silicon-on-insulator; system-on-chip; DVFS; SoC designs; UTBB FD-SOI technology; UWVR; VSA; bulk technology; dynamic voltage and frequency scaling; flip-well design methodology; forward body bias modulation; size 28 nm; system-on-chip; ultra wide voltage range; ultra-thin body and BOX fully depleted SOI; voltage 0.4 V to 1.3 V; voltage sense amplifier; Design methodology; Logic gates; MOS devices; Optimization; Power demand; Random access memory; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location :
Pavia
Print_ISBN :
978-1-4673-4740-2
Electronic_ISBN :
978-1-4673-4741-9
Type :
conf
DOI :
10.1109/ICICDT.2013.6563301
Filename :
6563301
Link To Document :
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