Impact of precursors choice on characteristics of PEALD SiN for spacer applications

Author

Triyoso, D.H. ; Hempel, K. ; Ohsiek, S. ; Shu, Jiangang ; Schaeffer, J.K. ; Lenski, Markus

Author_Institution

GLOBALFOUNDRIES, Dresden, Germany

fYear

2013

fDate

29-31 May 2013

Firstpage

69

Lastpage

72

Abstract

As transistor size continues to shrink, the need for conformal spacer which is insensitive to loading condition arises. Previously we have reported improved device characteristics for transistors with PEALD SiN spacer compared to those with CVD SiN spacer. In this work characteristics of PEALD SiN spacer deposited with liquid or gas precursors is studied. Good device properties are obtained with both precursor types, with slightly better iso-loading characteristics for devices with SiN deposited using liquid precursor.

Keywords

atomic layer deposition; chemical vapour deposition; silicon compounds; transistors; CVD spacer; PEALD spacer; SiN; conformal spacer; device characteristics; device property; gas precursor; iso-loading characteristics; liquid precursor; loading condition; precursors choice; spacer applications; transistors; Films; Loading; Logic gates; Plasma temperature; Resistance; Silicon compounds; Transistors; ALD; SiN; high-k metal gate; iso-dense loading; spacer;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2013 International Conference on

Conference_Location

Pavia

Print_ISBN

978-1-4673-4740-2

Electronic_ISBN

978-1-4673-4741-9

Type

conf

DOI

10.1109/ICICDT.2013.6563305

Filename

6563305