Title :
High-speed and highly accurate evaluation of electrical characteristics in MOSFETs
Author :
Teramoto, A. ; Sugawa, Shigetoshi ; Ohmi, Tadahiro
Author_Institution :
New Ind. Creation Hatchery Center, Tohoku Univ., Sendai, Japan
Abstract :
Threshold voltage variability, random telegraph signal, and leakage current of gate oxides and pn junctions of numerous MOSFETs are evaluated by the array test circuits. By converting from current signal of MOSFETs to the voltage signal in the test circuit, accurate and high speed measurement can be obtained. These numerous data of variability, noise, and leakage current caused by the defects in MOSFETs are very useful for the process development and constructing the device structures.
Keywords :
MOSFET; leakage currents; MOSFET; electrical characteristics; gate oxides; leakage current; random telegraph signal; threshold voltage variability; Current measurement; Junctions; Leakage currents; Logic gates; MOSFET; Stress; Switches; MOSFET; Random telegraph signal; Vth variability; leakage current; test circuit;
Conference_Titel :
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location :
Pavia
Print_ISBN :
978-1-4673-4740-2
Electronic_ISBN :
978-1-4673-4741-9
DOI :
10.1109/ICICDT.2013.6563333
