High-density capacitors for SiP and SoC applications based on three-dimensional integrated metal-isolator-metal structures

Author

Weinreich, W. ; Rudolph, Matthias ; Koch, Jurgen ; Paul, J. ; Seidel, K. ; Riedel, S. ; Sundqvist, Jonas ; Steidel, Katja ; Gutsch, Manuela ; Beyer, V. ; Hohle, Christoph

Author_Institution

Bus. Unit Fraunhofer Center Nanoeletronic Technol., Fraunhofer Inst. of Photonic Microsyst., Dresden, Germany

fYear

2013

fDate

29-31 May 2013

Firstpage

227

Lastpage

230

Abstract

This paper focuses on zirconia and TiN based metal-isolator-metal capacitors integrated in immediate vicinity to the Si substrate. A high capacitance density is aimed by significant area enhancement realized through silicon pattering. By material optimization the capacitors also withstand higher supply voltages and show excellent temperature and reliability performance independently of the 3D structure.

Keywords

capacitors; elemental semiconductors; integrated circuit reliability; silicon; system-in-package; system-on-chip; titanium compounds; zirconium compounds; Si; SiP application; SoC application; TiN; capacitance density; high-density capacitors; material optimization; reliability performance; silicon patterning; silicon substrate; system-in-package; system-on-chip; three-dimensional integrated metal-isolator-metal structures; titanium nitride-based metal-isolator-metal capacitors; zirconia-based metal-isolator-metal capacitors; Capacitance; Capacitors; Electrodes; Silicon; Tin; 3D Si trench etching; high-density capacitor; high-k; metal-isolator-metal;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2013 International Conference on

Conference_Location

Pavia

Print_ISBN

978-1-4673-4740-2

Electronic_ISBN

978-1-4673-4741-9

Type

conf

DOI

10.1109/ICICDT.2013.6563342

Filename

6563342