Title :
Approach on Electrostatic Discharge protection structures based on Transient Voltage Suppressor diodes
Author :
Bicleanu, Dumitru-Paul ; Nicuta, Ana-Maria
Author_Institution :
Fac. of Electr. Eng., Gheorghe Asachi Tech. Univ. of Iasi, Iasi, Romania
Abstract :
The authors aim to demonstrate the benefits of using the Transient Voltage Suppressor diodes to enhance the immunity of MOSFET Integrated Circuits versus Electrostatic Discharge effects. There were used Transient Voltage Suppressor diodes as protection elements, with passive elements for signal filtering and protection against higher current magnitude. For biasing the protection structure it was used a PMOS/NMOS tandem with filtering passive elements.
Keywords :
MOSFET; electrostatic discharge; semiconductor diodes; MOSFET integrated circuits; PMOS-NMOS tandem; current magnitude; electrostatic discharge protection structures; passive elements; protection elements; signal filtering; transient voltage suppressor diodes; Clamps; Electrostatic discharges; Operational amplifiers; Rails; Resistors; Semiconductor diodes; Transient analysis;
Conference_Titel :
Advanced Topics in Electrical Engineering (ATEE), 2013 8th International Symposium on
Conference_Location :
Bucharest
Print_ISBN :
978-1-4673-5979-5
DOI :
10.1109/ATEE.2013.6563381
