A novel ESD protection structure used to enhance the safety of the MOSFET integrated circuitry

The Electrostatic Discharge Phenomenon represents a threat for electronic equipment, especially for the semiconductor devices. The present paper is focused on a novel Electrostatic Discharge Protection circuit designed to provide a secure path for the transient signals. Another innovative element in this work represents the combination between the MOSFET transistors and the Transient Voltage Suppressor diodes, with different passive components. The software platform used for simulations was PSPICE. The research undertaken in this paper is useful in electronic industry, in order to find and to choose the correct components for each of the protected circuits. Thus it could be reduced or even eliminated the effects of electrostatic discharges.