Dual-band class-E RF PA design utilizing complex impedance transformers

The design procedure and simulation results of a dual-band class-E power amplifier (PA) are presented. The idealized design of such a PA is briefly reviewed and refined in light of the non-ideal nature of physical transistors, with optimal impedances determined by load and source pull simulations performed at the two fundamental frequencies. Using recent work on dual-band transmission line (TL) impedance transformers, we create T L topologies that simultaneously match these complex impedances at two different frequencies, which can be widely separated. All simulations are performed using Agilent ADS and the nonlinear transistor model available from the manufacturer.