Title :
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
Author :
Quang Ho Luc ; Chang, Edward Yi ; Hai Dang Trinh ; Yueh Chin Lin ; Hong Quan Nguyen ; Yuen Yee Wong ; Huy Binh Do ; Salahuddin, Sania ; Hu, Chenming Calvin
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al2O3/In0.53Ga0.47As interfaces qualities are studied with different plasma powers. The improvement in electrical properties, including capacitance-voltage (C-V) hysteresis, frequency dispersion, and interface state densities (Dit) are demonstrated on the Al2O3/n, p-In0.53Ga0.47As MOS capacitors. The excellent C-V behaviors are observed on both type of In0.53Ga0.47As-based MOS devices by performing a thin AlN-IPL at the plasma power of 150 W. To explore the interaction between PEALD-AlN layer and In0.53Ga0.47As surface, X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy analyses have also been characterized.
Keywords :
III-V semiconductors; MOS capacitors; X-ray photoelectron spectra; alumina; atomic layer deposition; gallium arsenide; indium compounds; interface states; passivation; plasma CVD; transmission electron microscopy; Al2O3-In0.53Ga0.47As; AlN; C-V hysteresis; IPL; X-ray photoelectron spectroscopy; capacitance-voltage hysteresis; electrical characteristics; electrical properties; frequency dispersion; high-resolution transmission electron microscopy analyses; in situ PEALD-AlN interfacial passivation layer; interface state densities; n-MOSCAPs; p-MOSCAPs; plasma enhanced atomic layer deposition; power 150 W; Aluminum oxide; Educational institutions; High K dielectric materials; III-V semiconductor materials; Passivation; Plasmas; ALN; Al₂O₃; Al2O3; AlN; In₀.₅₃Ga₀.₄₇As; In0.53Ga0.47As; MOS capacitor (MOSCAP); plasma enhanced atomic layer deposition (PEALD); plasma enhanced atomic layer deposition (PEALD).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2329479
