DocumentCode :
62278
Title :
A GaN Pulse Width Modulation Integrated Circuit for GaN Power Converters
Author :
Hanxing Wang ; Kwan, Alex Man Ho ; Qimeng Jiang ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Volume :
62
Issue :
4
fYear :
2015
fDate :
Apr-15
Firstpage :
1143
Lastpage :
1149
Abstract :
We report the first gallium nitride (GaN)-based pulse width modulation (PWM) integrated circuit (IC) featuring monolithically integrated enhancement- and depletion-mode high electron mobility transistors and lateral field-effect rectifiers on the GaN smart power technology platform. The PWM IC is able to generate 1-MHz PWM signal with its duty cycle modulated effectively by a reference voltage ( V_{c}) over a wide range with good linearity. It features a 5 V supply voltage and is composed of a sawtooth generator and a comparator, both of which can be operated at 1 MHz and exhibit proper functionality over a wide temperature range (from 25 °C to 250 °C). This circuit demonstration further proves the feasibility of an all-GaN solution that features monolithically integrated peripheral gate control circuits and power switches for GaN power converters. An all-GaN solution would lead to a compact system with improved efficiency and enhanced reliability.
Keywords :
PWM power convertors; driver circuits; gadolinium compounds; integrated circuits; rectifiers; GaN; PWM IC; depletion-mode high electron mobility transistors; duty cycle; gallium nitride-based pulse width modulation IC; lateral field-effect rectifiers; monolithically integrated enhancement; monolithically integrated peripheral gate control circuits; power converters; power switches; pulse width modulation integrated circuit; sawtooth generator; smart power technology platform; Gallium nitride; Generators; HEMTs; Integrated circuits; Logic gates; MODFETs; Pulse width modulation; All-gallium nitride (GaN) solution; GaN; gate driver; integrated circuit (IC); pulse width modulation (PWM); pulse width modulation (PWM).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2396649
Filename :
7039214
Link To Document :
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