Title :
Overview of SiC power devices and its applications in power electronic converters
Author :
Haihong Qin ; Bin Zhao ; Xin Nie ; Jiaopu Wen ; Yangguang Yan
Author_Institution :
Jiangsu Key Lab. of New Energy Generation & Power Conversion, Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China
Abstract :
Power devices based on Silicon Carbide (SiC) have better performances than its silicon counter-parts on the switch level. This paper describes the current state of the art of SiC devices briefly. Then the applications of SiC devices in several typical applications are given. And the hinder to the broader implementation of SiC devices are discussed. Finally, the perspective of SiC power devices is given.
Keywords :
electric vehicles; military vehicles; power convertors; power field effect transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; electric combat vehicles; power electronic converters; semiconductor power devices; Inverters; JFETs; Schottky diodes; Silicon; Silicon carbide; Switches; JFETs; SiC semiconductor; high temperature; power density;
Conference_Titel :
Industrial Electronics and Applications (ICIEA), 2013 8th IEEE Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-6320-4
DOI :
10.1109/ICIEA.2013.6566414
