DocumentCode
623217
Title
Overview of SiC power devices and its applications in power electronic converters
Author
Haihong Qin ; Bin Zhao ; Xin Nie ; Jiaopu Wen ; Yangguang Yan
Author_Institution
Jiangsu Key Lab. of New Energy Generation & Power Conversion, Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China
fYear
2013
fDate
19-21 June 2013
Firstpage
466
Lastpage
471
Abstract
Power devices based on Silicon Carbide (SiC) have better performances than its silicon counter-parts on the switch level. This paper describes the current state of the art of SiC devices briefly. Then the applications of SiC devices in several typical applications are given. And the hinder to the broader implementation of SiC devices are discussed. Finally, the perspective of SiC power devices is given.
Keywords
electric vehicles; military vehicles; power convertors; power field effect transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; electric combat vehicles; power electronic converters; semiconductor power devices; Inverters; JFETs; Schottky diodes; Silicon; Silicon carbide; Switches; JFETs; SiC semiconductor; high temperature; power density;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics and Applications (ICIEA), 2013 8th IEEE Conference on
Conference_Location
Melbourne, VIC
Print_ISBN
978-1-4673-6320-4
Type
conf
DOI
10.1109/ICIEA.2013.6566414
Filename
6566414
Link To Document