DocumentCode
62357
Title
High Mobility Pentacene/C60-Based Ambipolar OTFTs by Thickness Optimization of Bottom Pentacene Layer
Author
Wei Wang ; Jun Ying ; Jinhua Han ; Wenfa Xie
Author_Institution
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
Volume
61
Issue
11
fYear
2014
fDate
Nov. 2014
Firstpage
3845
Lastpage
3851
Abstract
In this paper, we investigated the dependence of ambipolar carriers transport on the thickness of bottom pentacene layers in a series of pentacene/C60 heterojection based ambipolar organic thin-film transistors (OTFTs). It was found that hole transport increased monotonically, while the electron transport increased at first and then decreased, with the increasing bottom pentacene layer thickness from 1.5 to 9 nm. The morphologies evolution of both pentacene and C60 layers, investigated by atomic force microscopy measurement, demonstrated the effect mechanism of the bottom pentacene layer thickness on the device performance of ambipolar OTFTs. The almost saturated hole mobility of 0.39 cm2/Vs and the highest electron mobility of 6.3 cm2/Vs were achieved in an optimized ambipolar OTFT with a 4.5-nm-thick pentacene layer.
Keywords
atomic force microscopy; carbon; electron mobility; heterojunction bipolar transistors; hole mobility; optimisation; organic field effect transistors; organic semiconductors; semiconductor device testing; thin film transistors; C60; ambipolar carriers; atomic force microscopy measurement; electron mobility; electron transport; heterojunction based ambipolar organic thin-film transistors; high mobility pentacene based ambipolar OTFT; hole mobility; hole transport; pentacene layer thickness; size 1.5 nm to 9 nm; thickness optimization; Charge carrier processes; Morphology; Organic thin film transistors; Pentacene; Surface morphology; Surface treatment; Ambipolar organic thin-film transistors (OTFTs); high mobility; pentacene/C₆₀ heterojunction; pentacene/C60 heterojunction;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2353212
Filename
6894602
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