DocumentCode :
62357
Title :
High Mobility Pentacene/C60-Based Ambipolar OTFTs by Thickness Optimization of Bottom Pentacene Layer
Author :
Wei Wang ; Jun Ying ; Jinhua Han ; Wenfa Xie
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
Volume :
61
Issue :
11
fYear :
2014
fDate :
Nov. 2014
Firstpage :
3845
Lastpage :
3851
Abstract :
In this paper, we investigated the dependence of ambipolar carriers transport on the thickness of bottom pentacene layers in a series of pentacene/C60 heterojection based ambipolar organic thin-film transistors (OTFTs). It was found that hole transport increased monotonically, while the electron transport increased at first and then decreased, with the increasing bottom pentacene layer thickness from 1.5 to 9 nm. The morphologies evolution of both pentacene and C60 layers, investigated by atomic force microscopy measurement, demonstrated the effect mechanism of the bottom pentacene layer thickness on the device performance of ambipolar OTFTs. The almost saturated hole mobility of 0.39 cm2/Vs and the highest electron mobility of 6.3 cm2/Vs were achieved in an optimized ambipolar OTFT with a 4.5-nm-thick pentacene layer.
Keywords :
atomic force microscopy; carbon; electron mobility; heterojunction bipolar transistors; hole mobility; optimisation; organic field effect transistors; organic semiconductors; semiconductor device testing; thin film transistors; C60; ambipolar carriers; atomic force microscopy measurement; electron mobility; electron transport; heterojunction based ambipolar organic thin-film transistors; high mobility pentacene based ambipolar OTFT; hole mobility; hole transport; pentacene layer thickness; size 1.5 nm to 9 nm; thickness optimization; Charge carrier processes; Morphology; Organic thin film transistors; Pentacene; Surface morphology; Surface treatment; Ambipolar organic thin-film transistors (OTFTs); high mobility; pentacene/C₆₀ heterojunction; pentacene/C60 heterojunction;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2353212
Filename :
6894602
Link To Document :
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