Capacitance and bandwidth tradeoffs in a cross-coupled CMOS negative capacitor

Recent advances in technology have driven renewed interest in the design of CMOS negative capacitance circuits for diverse applications such as wideband metamaterials and radio frequency integrated circuits. In practice, the particular CMOS fabrication process generally limits the practical range of capacitance values and bandwidths that can be achieved. In addition, the reactive component of the desired impedance is often accompanied by a parasitic resistive component. To address these issues, a CMOS cross-coupled negative capacitance circuit is designed and simulated in a 0.5 micron CMOS process. Results are presented for -5 pF, -10 pF, and -20 pF designs with ten-percent bandwidths of approximately 140 MHz, 100 MHz, and 80 MHz respectively.