Title :
A 73.9–83.5GHz synthesizer with −111dBc/Hz phase noise at 10MHz offset in a 130nm SiGe BiCMOS technology
Author :
Plouchart, J.-O. ; Ferriss, Mark ; Sadhu, B. ; Sanduleanu, Mihai ; Parker, Brendon ; Reynolds, S.
Author_Institution :
IBM, Research Triangle Park, NC, USA
Abstract :
A 73.9-83.5 GHz synthesizer is implemented in a 130nm SiGe BiCMOS technology. The measured phase noise at 10KHz and 10MHz offset of the 82.4GHz carrier are -88.5dBc/Hz and -111dBc/Hz respectively. Reference spurs are -67 dBc. The synthesizer integrates voltage regulators and power management for SoC applications; it consumes 0.51 W from 1.5 V and 2.7 V supplies, and occupies 0.85 mm × 2.9 mm.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; frequency synthesizers; phase noise; system-on-chip; voltage regulators; SiGe; SiGe BiCMOS technology; SoC applications; frequency 73.9 GHz to 83.5 GHz; phase noise; power 0.51 W; power management; reference spurs; size 130 nm; synthesizer; voltage 1.5 V; voltage 2.7 V; voltage regulators; Mixers; Noise measurement; Phase locked loops; Phase measurement; Phase noise; Synthesizers; Voltage-controlled oscillators; ICs; PLL; SoC; Synthesizer; VCO; W-band; frequency multiplier; mm-wave; phase noise;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6059-3
DOI :
10.1109/RFIC.2013.6569539
