A highly linear low-noise amplifier using a wideband linearization technique with tunable multiple gated transistors

A wideband linearization technique using tunable multiple gated transistors (MGTRs) is proposed. Extra tunable input capacitors and the modified derivative superposition (DS) method are also adopted to increase the amplifier´s linearity at RF. A low-noise amplifier (LNA) employing the proposed linearization technique has been developed with 0.18-μm CMOS process for various mobile TV standards in UHF band (470-862 MHz). The LNA achieves 19-dBm IIP₃, 16.5-dB gain, and 1.33-dB NF with 10.8-mW power consumption. Over the desired UHF band, the LNA increases the average IIP₃ obtained with off-state auxiliary transistor by 11.7 dBm.