Title :
A dual-band LO generation system using a 40GHz VCO with a phase noise of −106.8dBc/Hz at 1-MHz
Author :
Ying Chen ; Yu Pei ; Leenaerts, Domine M. W.
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
Abstract :
This paper demonstrates a dual-band LO generation system using a low phase noise single-band 40GHz VCO as the signal source. The LO generation system has two outputs: single-band LO1 at 20GHz and dual-band LO2 switchable between 10GHz and 15GHz. Implemented in 0.25-μm SiGe:C BiCMOS, the VCO achieves a phase noise of -106.8dBc/Hz at 1-MHz offset from 40GHz with a frequency tuning range of 9.7%.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; carbon; microwave oscillators; phase noise; voltage-controlled oscillators; SiGe:C; dual-band LO generation system; dual-band LO2; frequency 1 MHz; frequency 10 GHz; frequency 15 GHz; frequency 20 GHz; frequency 40 GHz; frequency tuning; phase noise single-band VCO; signal source; single-band LO1; size 0.25 mum; Dual band; Frequency measurement; Mixers; Phase noise; Tuning; Voltage-controlled oscillators; LO generation; VCO; dual-band; frequency divider; mixer; phase noise;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6059-3
DOI :
10.1109/RFIC.2013.6569561
