DocumentCode :
625430
Title :
A linear-in-dB analog baseband circuit for low power 60GHz receiver in standard 65nm CMOS
Author :
Yanjie Wang ; Hull, Christopher ; Murata, Genki ; Ravid, Shmuel
Author_Institution :
Intel Corp., Hillsboro, OR, USA
fYear :
2013
fDate :
2-4 June 2013
Firstpage :
225
Lastpage :
228
Abstract :
This paper presents an analog baseband (ABB) circuit for low power 60 GHz wireless receiver in standard 65 nm CMOS. The proposed analog baseband system combines variable gain amplifiers (VGA) with a 3rd-order type II Chebyshev filter and provides linear steps as well as filter tuning range to achieve sufficient out-of-band rejection. The ABB demonstrates 2 dB gain step tuning range from 3 - 31 dB, 3-dB bandwidth of 980 MHz, OP1dB of 0dBm, and noise figure of 6 dB to 21 dB. The ABB consumes 48 mW at max gain setting and 32 mW at minimum gain setting from a 1.1 V supply. The entire ABB occupies an area of 1.1 mm2 with active area of 0.2 mm2.
Keywords :
CMOS analogue integrated circuits; Chebyshev filters; Chebyshev filter; VGA; analog baseband circuit; analog baseband system; bandwidth 980 MHz; frequency 60 GHz; gain 2 dB; noise figure 6 dB to 21 dB; power 32 mW; power 48 mW; size 65 nm; standard CMOS; variable gain amplifiers; voltage 1.1 V; wireless receiver; Baseband; CMOS integrated circuits; Chebyshev approximation; Gain; Noise measurement; Receivers; Tuning; Analog; Chebyshev filter; baseband; variable gain amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
ISSN :
1529-2517
Print_ISBN :
978-1-4673-6059-3
Type :
conf
DOI :
10.1109/RFIC.2013.6569567
Filename :
6569567
Link To Document :
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