DocumentCode
625435
Title
Dual-core high-swing class-C oscillator with ultra-low phase noise
Author
Tohidian, Massoud ; Mehr, Seyed Amir Reza Ahmadi ; Bogdan, R.
Author_Institution
Delft Univ. of Technol., Delft, Netherlands
fYear
2013
fDate
2-4 June 2013
Firstpage
243
Lastpage
246
Abstract
We propose an ultra-low phase noise oscillator topology that works on the premise that coupling a second identical oscillator core would reduce the overall phase noise by 3 dB. For each core, a high-swing class-C oscillator is used to achieve the lowest phase noise. The realized oscillator is tunable from 4.07-4.91 GHz, drawing 39-59 mA from a 2.15 V power supply. The measured phase noise is -146.7 dBc/Hz and -163.1 dBc/Hz at 3 MHz and 20 MHz offset, respectively, from 4.07 GHz carrier. This is the lowest ever reported phase noise in bulk CMOS IC. This phase noise meets GSM900 normal basestation receiver and mobile station transmitter standards, which have the toughest phase noise requirements in cellular communications.
Keywords
CMOS integrated circuits; cellular radio; oscillators; phase noise; power supply circuits; radio receivers; GSM900 normal basestation receiver; bulk CMOS IC; cellular communications; current 39 mA to 59 mA; dual-core high-swing class-C oscillator; frequency 4.07 GHz to 4.91 GHz; measured phase noise; mobile station transmitter standards; overall phase noise; phase noise requirements; power supply; realized oscillator; second identical oscillator core; ultra-low phase noise oscillator topology; voltage 2.15 V; CMOS integrated circuits; Capacitors; Inductance; Inductors; Noise measurement; Phase noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location
Seattle, WA
ISSN
1529-2517
Print_ISBN
978-1-4673-6059-3
Type
conf
DOI
10.1109/RFIC.2013.6569572
Filename
6569572
Link To Document