Title :
A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm Psat and 16% PAE in 45-nm SOI CMOS
Author :
Agah, A. ; Wei Wang ; Asbeck, P.M. ; Larson, Lawrence ; Buckwalter, James F.
Author_Institution :
Univ. of California at San Diego, La Jolla, CA, USA
Abstract :
A novel stacked FET digital-to-RF converter is implemented in 45-nm SOI CMOS, which shares DC current through an I/Q digital-to-analog converter (DAC), I/Q mixer, and stacked-FET PA to provide high output power. The proposed architecture transmits at 1.25 Gbps for QPSK at 45GHz. This transmitter exhibits a 21.3-dBm saturated output power, while achieving a peak PAE of 16%. The circuit occupies 0.3 mm2 including pads, while the PAE and Psat remains above 13% and 18 dBm from 42 to 47 GHz.
Keywords :
CMOS integrated circuits; digital-analogue conversion; field effect transistors; mixers (circuits); DAC; DC current; I/Q digital-to-analog converter; I/Q mixer; PAE; QPSK; SOI CMOS; bit rate 1.25 Gbit/s; digital-to-RF converter; frequency 42 GHz to 47 GHz; frequency 45 GHz; size 45 nm; stacked-FET PA; Binary phase shift keying; CMOS integrated circuits; Gain; Power amplifiers; Power generation; CMOS SOI Power amplifier; Digital-to-RF Converter; Direct Conversion; Power DAC; Stacked FET;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6059-3
DOI :
10.1109/RFIC.2013.6569574
