A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm Psat and 16% PAE in 45-nm SOI CMOS

Author

Agah, A. ; Wei Wang ; Asbeck, P.M. ; Larson, Lawrence ; Buckwalter, James F.

Author_Institution

Univ. of California at San Diego, La Jolla, CA, USA

fYear

2013

fDate

2-4 June 2013

Firstpage

249

Lastpage

252

Abstract

A novel stacked FET digital-to-RF converter is implemented in 45-nm SOI CMOS, which shares DC current through an I/Q digital-to-analog converter (DAC), I/Q mixer, and stacked-FET PA to provide high output power. The proposed architecture transmits at 1.25 Gbps for QPSK at 45GHz. This transmitter exhibits a 21.3-dBm saturated output power, while achieving a peak PAE of 16%. The circuit occupies 0.3 mm² including pads, while the PAE and P_sat remains above 13% and 18 dBm from 42 to 47 GHz.

Keywords

CMOS integrated circuits; digital-analogue conversion; field effect transistors; mixers (circuits); DAC; DC current; I/Q digital-to-analog converter; I/Q mixer; PAE; QPSK; SOI CMOS; bit rate 1.25 Gbit/s; digital-to-RF converter; frequency 42 GHz to 47 GHz; frequency 45 GHz; size 45 nm; stacked-FET PA; Binary phase shift keying; CMOS integrated circuits; Gain; Power amplifiers; Power generation; CMOS SOI Power amplifier; Digital-to-RF Converter; Direct Conversion; Power DAC; Stacked FET;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE

Conference_Location

Seattle, WA

ISSN

1529-2517

Print_ISBN

978-1-4673-6059-3

Type

conf

DOI

10.1109/RFIC.2013.6569574

Filename

6569574