A fully integrated 22.6dBm mm-Wave PA in 40nm CMOS

Author

Shirinfar, Farid ; Nariman, Med ; Sowlati, Tirdad ; Rofougaran, Maryam ; Rofougaran, Reza ; Pamarti, Sudhakar

Author_Institution

Univ. of California, Los Angeles, Los Angeles, CA, USA

fYear

2013

fDate

2-4 June 2013

Firstpage

279

Lastpage

282

Abstract

A fully integrated 60GHz CMOS PA with a PSAT of 22.6dBm is presented. To our knowledge, this is the highest reported PSAT at mm-waves in standard CMOS. To achieve a high power level, 32 differential PAs are combined through a network of transmission lines, Wilkinson combiners, and a multi-port argyle transformer. This method of combining minimizes loss while implementing a low impedance load (~12Ω) at the drains of each of the last stage PAs. Electromigration and other reliability issues are discussed.

Keywords

CMOS analogue integrated circuits; differential amplifiers; electromigration; integrated circuit reliability; millimetre wave amplifiers; CMOS PA; PSAT; Wilkinson combiner; differential PA; electromigration; frequency 60 GHz; multiport argyle transformer; reliability issue; size 40 nm; transmission line; CMOS integrated circuits; CMOS technology; Impedance; Power amplifiers; Power generation; Standards; Transistors; Differential amplifiers; millimeter wave integrated circuits; passive circuits; power amplifiers; transformer;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE

Conference_Location

Seattle, WA

ISSN

1529-2517

Print_ISBN

978-1-4673-6059-3

Type

conf

DOI

10.1109/RFIC.2013.6569582

Filename

6569582