A frequency-agile RF frontend for multi-band TDD radios in 45nm SOI CMOS

Author

Goswami, Suparna ; Kim, Heonhwan ; Dawson, Joel L.

Author_Institution

Massachusetts Inst. of Technol., Cambridge, MA, USA

fYear

2013

fDate

2-4 June 2013

Firstpage

331

Lastpage

334

Abstract

A tunable and highly digital RF frontend for multi-band TDD radios is integrated in 45nm SOI CMOS. The PA absorbs the TX branch of the TX/RX switch with no added loss. Peak PA output power is 27.5±0.5dBm from 1.6 to 3.4GHz, with up to 30% total efficiency at 2V. For TDD LTE applications, better than -30dBc ACLR and -25dB EVM is measured with 16-QAM, 20MHz signals from 1.65 to 3.5GHz, with up to 16.5% average efficiency and 22.9dBm average power. The broadband LNA achieves A_V > 14dB, NF=4.3 ± 1.6dB and IIP3 > -7dBm from 1.6 to 3.4GHz while drawing just 6mA from 1V.

Keywords

CMOS analogue integrated circuits; Long Term Evolution; MMIC power amplifiers; field effect MMIC; low noise amplifiers; quadrature amplitude modulation; silicon-on-insulator; time division multiplexing; 16-QAM; EVM; LNA; PA; SOI CMOS; TDD LTE applications; TX branch; TX-RX switch; current 6 mA; efficiency 16.5 percent; efficiency 30 percent; frequency 1.6 GHz to 3.5 GHz; frequency-agile RF frontend; highly digital RF frontend; low-noise amplifiers; multiband TDD radios; power amplifiers; size 45 nm; tunable digital RF frontend; voltage 1 V; voltage 2 V; CMOS integrated circuits; Computer architecture; Current measurement; Power amplifiers; Radio frequency; Resonant frequency; Switches; 4G wireless communication; low-noise amplifiers; power amplifiers; silicon on insulator technology; software radio; time division multiplexing; wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE

Conference_Location

Seattle, WA

ISSN

1529-2517

Print_ISBN

978-1-4673-6059-3

Type

conf

DOI

10.1109/RFIC.2013.6569596

Filename

6569596