A Ka-Band doherty power amplifier with 25.1 dBm output power, 38% peak PAE and 27% back-off PAE

Author

Curtis, Jeffery ; Pham, Anh-Vu ; Chirala, Mohan ; Aryanfar, Farshid ; Zhouyue Pi

Author_Institution

Davis Millimeter-wave Res. Center, Davis, CA, USA

fYear

2013

fDate

2-4 June 2013

Firstpage

349

Lastpage

352

Abstract

We present the design and development of the first fully integrated, two stage Doherty power amplifier (DPA) in the Ka-Band. The DPA is fabricated in a 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. At 26.4 GHz, the amplifier achieves measured small signal gain of 10.3 dB, output power at 1-dB compression point (P1dB) of 25.1 dBm, peak power added efficiency (PAE) of 38%, and PAE of 27% at 6 dB back-off power. To the best of the author´s knowledge, this Doherty circuit is the first fully integrated millimeter-wave amplifier that achieves the highest power and a recorded 27% PAE at 6-dB back-off and each unit amplifier has 2 stages.

Keywords

high electron mobility transistors; millimetre wave power amplifiers; DPA; Doherty circuit; Doherty power amplifier; Ka band; PAE; back off power; frequency 26.4 GHz; gain 10.3 dB; millimeter wave amplifier; pHEMT process; peak power added efficiency; pseudomorphic high electron mobility transistor; signal gain; Computer architecture; Gallium arsenide; Microprocessors; Millimeter wave communication; Power amplifiers; Power generation; Power measurement; Gallium arsenide; MIMICs; Millimeter wave devices; Millimeter wave integrated circuits; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE

Conference_Location

Seattle, WA

ISSN

1529-2517

Print_ISBN

978-1-4673-6059-3

Type

conf

DOI

10.1109/RFIC.2013.6569601

Filename

6569601