High-Power Tunable Dilute Mode DFB Laser With Low RIN and Narrow Linewidth

Author

Faugeron, Michael ; Tran, M. ; Parillaud, O. ; Chtioui, Mourad ; Robert, Yannick ; Vinet, Eric ; Enard, A. ; Jacquet, Joel ; van Dijk, Frederic

Author_Institution

Thales Air Syst., Limours, France

Volume

25

Issue

1

fYear

2013

fDate

Jan.1, 2013

Firstpage

7

Lastpage

10

Abstract

We have developed a 1-mm-long high-power DFB laser using an asymmetrical cladding based on the dilute waveguide technique. We have obtained about 180 mW output power at 25°C and >;30 mW at 15°C-85°C chip temperature with >;55-dB sidemode suppression ratio. This temperature range allows a 9.7-nm wavelength tunability. For high output power, the relative intensity noise is lower than -160 dB/Hz in the 0.08-40-GHz frequency range and the optical linewidth is better than 300 kHz.

Keywords

III-V semiconductors; claddings; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser noise; laser tuning; optical waveguides; semiconductor lasers; InGaAsP-InP; asymmetrical cladding; dilute waveguide technique; frequency 0.08 GHz to 40 GHz; high power tunable dilute mode DFB laser; low relative intensity noise laser; narrow linewidth laser; sidemode suppression ratio; size 1 mm; temperature 15 C to 85 C; Distributed feedback devices; Indium phosphide; Optical fibers; Power lasers; Temperature measurement; Waveguide lasers; 15 $mu{rm m}$ distributed feedback lasers; high-power diode lasers; low relative intensity noise (RIN); narrow linewidth;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2225419

Filename

6340310