Composite memristance of parallel and serial memristor circuits

When multiple memristors are connected to each other, the composite behavior of the devices becomes complicated and is difficult to predict, due to the polarity dependent nonlinear variation in the memristance of individual memristor. In this paper, we investigate the relationships among flux, charge and memristance of diverse composite memristors, using the HP TiO₂ model, and analyze the characteristics of complex memristor circuits. It is assumed that all memristor circuits operate at a stable composite memristance state, in which the composite flux curve does not vary and the memristor circuits act as a single memristive system, regardless of input current or voltage. Such study will be conducted for serial and parallel memristor circuits.