• DocumentCode
    626582
  • Title

    Ultra low power NEMFET based logic

  • Author

    Enachescu, Marius ; Lefter, Mihai ; Bazigos, Antonios ; Ionescu, A.M. ; Cotofana, Sorin D.

  • Author_Institution
    Comput. Eng. Lab., Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    566
  • Lastpage
    569
  • Abstract
    In this paper, we introduce a Nano-Electro-Mechanical Field Effect Transistor (NEMFET) based logic family tailored to the implementation of low speed and ultra low energy functional units and processors. Basic Boolean gates implemented with NEMFETs only are analysed and compared against equivalent CMOS realisations. Our simulations suggest that the proposed short-circuit current free NEMFET gates exhibit up to 10x dynamic energy reduction and up to 2 orders of magnitude less leakage, at the expense of 10 to 20x slower operation, when compared with CMOS counterparts. We also analyse the fan-in influence on gate performance and observe that NEMFET the gate energy advantage increases with fan-in. Finally, we consider a 3D-Stacked hybrid NEMFET-CMOS computation platform running a heartbeat rate monitor application and demonstrate that NEMFET based logic is an enabling factor for the implementation of “zero-energy” operated systems.
  • Keywords
    CMOS logic circuits; field effect transistors; logic gates; low-power electronics; nanoelectromechanical devices; 3D-stacked hybrid NEMFET-CMOS computation platform; NEMFET; dynamic energy reduction; equivalent CMOS realisations; heartbeat rate monitor application; nanoelectromechanical field effect transistor; short-circuit current free NEMFET gates; ultralow energy functional units; ultralow power NEMFET based logic family; zero-energy operated systems; CMOS integrated circuits; Delays; Integrated circuit modeling; Inverters; Logic gates; Semiconductor device modeling; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
  • Conference_Location
    Beijing
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-5760-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2013.6571905
  • Filename
    6571905