Wireless Power Transfer H-Bridge design with serial resonance and varying supply voltage

In this manuscript the authors discuss the issues of designing and implementing an H-Bridge circuit with respect to small switching losses, minimal hardware afford and maximal flexibility of excitation and control. The H-Bridge is targeted for a biomedical Wireless Power Transfer (WPT) application, where the receiver (RX) is small compared to the transmitter (TX) and, thus, negligible. Resonance is applied on the TX side, while the input voltage to the H-Bridge is able to vary in the range of 3V to 28V depending on a flexible relation between the TX and RX. This causes effects to the design and the gate drivers of the H-Bridge. An H-Bridge design is proposed, which includes the use of an n-channel and p-channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for a direct addressing of gates with a microcontroller (μC). In addition, the switching losses are lowered by the introduction of choke inductors and non-overlapping time delayed driving signals. Furthermore, the proposed solution has been verified, since significant advancements compared to state-of-the-art H-Bridge designs can be shown.