DocumentCode
626618
Title
High-side NMOS power switch and bootstrap driver for high-frequency fully-integrated converters with enhanced efficiency
Author
Cheng Huang ; Lin Cheng ; Mok, Philip K. T. ; Wing-Hung Ki
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear
2013
fDate
19-23 May 2013
Firstpage
693
Lastpage
696
Abstract
This paper proposes a High-Side (HS) NMOS power switch and bootstrap driver with DCM charging phase extension for high-frequency fully-integrated converters with 1.2V supply voltage. The conventional bootstrap diode is replaced by a self-synchronized switch and the efficiency loss and operation failure at DCM is prevented by an extra charging phase. Simulation at 100MHz with UMC 0.13μm process shows that the optimum efficiency is driven 2% higher with significant power loss reduction by the proposed design compared to a conventional converter under similar operation conditions. 20% power stage area is saved by the dual NMOS structure compared to the conventional converter with PMOS and NMOS switches.
Keywords
MOS integrated circuits; driver circuits; power convertors; semiconductor diodes; switches; DCM charging phase extension; UMC process; bootstrap diode; bootstrap driver; enhanced efficiency; extra charging phase; fully integrated converter; high-frequency converter; high-side NMOS power switch; self-synchronized switch; size 0.13 mum; voltage 1.2 V; Capacitance; Capacitors; Inductors; MOS devices; Switches; Switching loss; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location
Beijing
ISSN
0271-4302
Print_ISBN
978-1-4673-5760-9
Type
conf
DOI
10.1109/ISCAS.2013.6571941
Filename
6571941
Link To Document