• DocumentCode
    626628
  • Title

    A 65nm CMOS wide-band LNA with continuously tunable gain from 0dB to 24dB

  • Author

    Sturm, Jurgen ; Xinbo Xiang ; Pretl, Harald

  • Author_Institution
    Sch. of Eng. & IT, Carinthia Univ. of Appl. Sci., Villach, Austria
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    733
  • Lastpage
    736
  • Abstract
    A bi-directional active resistor structure with quasifloating gate MOS transistors and non-linearity compensation is used in a resistive negative feedback wide-band LNA implementation enabling a continuously tunable gain from 0dB to 24dB. The LNA has been realized in 65nm CMOS with a minimum noise figure of 2.5dB and IIP3 of -8dBm at highest gain. The LNA bandwidth is from 100MHz to 2GHz, with a power consumption of 12mW and an active area of 0.0375mm2.
  • Keywords
    CMOS integrated circuits; feedback amplifiers; low noise amplifiers; CMOS wideband LNA; continuously tunable gain; gain 0 dB to 24 dB; gate MOS transistors; nonlinearity compensation; resistive negative feedback; wavelength 65 nm; Gain; Noise; Noise measurement; Radio frequency; Resistors; Tuning; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
  • Conference_Location
    Beijing
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-5760-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2013.6571951
  • Filename
    6571951
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=626628