Title :
A 65nm CMOS wide-band LNA with continuously tunable gain from 0dB to 24dB
Author :
Sturm, Jurgen ; Xinbo Xiang ; Pretl, Harald
Author_Institution :
Sch. of Eng. & IT, Carinthia Univ. of Appl. Sci., Villach, Austria
Abstract :
A bi-directional active resistor structure with quasifloating gate MOS transistors and non-linearity compensation is used in a resistive negative feedback wide-band LNA implementation enabling a continuously tunable gain from 0dB to 24dB. The LNA has been realized in 65nm CMOS with a minimum noise figure of 2.5dB and IIP3 of -8dBm at highest gain. The LNA bandwidth is from 100MHz to 2GHz, with a power consumption of 12mW and an active area of 0.0375mm2.
Keywords :
CMOS integrated circuits; feedback amplifiers; low noise amplifiers; CMOS wideband LNA; continuously tunable gain; gain 0 dB to 24 dB; gate MOS transistors; nonlinearity compensation; resistive negative feedback; wavelength 65 nm; Gain; Noise; Noise measurement; Radio frequency; Resistors; Tuning; Voltage control;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6571951
