• DocumentCode
    626813
  • Title

    Output-capacitorless CMOS LDO regulator based on high slew-rate current-mode transconductance amplifier

  • Author

    Saberkari, Alireza ; Fathipour, Rasoul ; Martinez, Horacio ; Poveda, Alberto ; Alarcon, Eduard

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Guilan, Rasht, Iran
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    1484
  • Lastpage
    1487
  • Abstract
    A low quiescent current output-capacitorless CMOS LDO regulator based on a high slew-rate current-mode transconductance amplifier (CTA) as an error amplifier is presented. Load transient characteristic of the proposed LDO is improved even at low quiescent currents, by using a local common-mode feedback (LCMFB) in the proposed CTA. This provides an increase in the order of transfer characteristic of the circuit, thereby enhancing the slew-rate at the gate of pass transistor. The proposed CTA-based LDO topology has been designed and post-layout simulated in HSPICE, in a 0.18 μm CMOS process to supply a load current between 0-100 mA. Postlayout simulation results reveal that the proposed LDO is stable without any internal compensation strategy and with on-chip output capacitor or lumped parasitic capacitances at the output node between 10-100 pF.
  • Keywords
    CMOS analogue integrated circuits; SPICE; amplifiers; capacitors; current-mode circuits; voltage regulators; CTA-based LDO topology; HSPICE; LCMFB; capacitance 10 pF to 100 pF; current 0 mA to 100 mA; error amplifier; high slew-rate CTA; high slew-rate current-mode transconductance amplifier; load transient characteristic; local common-mode feedback; low quiescent current output-capacitorless CMOS LDO regulator; lumped parasitic capacitances; on-chip output capacitor; size 0.18 mum; CMOS integrated circuits; Capacitors; Logic gates; Regulators; Transient analysis; Transient response; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
  • Conference_Location
    Beijing
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-5760-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2013.6572138
  • Filename
    6572138