TSV-based on-chip inductive coupling communications

This paper presents a novel wireless through silicon via (TSV) communication structure based on near-field inductive-coupling. The proposed system uses a spiral inductor built using TSV technology. The electrical performance obtained from EM-based S-parameter simulations for different number of turns and configurations are presented. The proposed wireless TSV shows good coupling coefficient. A closed form expression for the coupling coefficient is presented. This coupling expression is verified against EM simulations and showed good agreement. The proposed wireless TSV system provides small area (30 μm)² for typical design values. This proposed communication system is enabling NoC.