Title :
A 47μW 204MHz AlN Contour-Mode MEMS based tunable oscillator in 65nm CMOS
Author :
Xiaotie Wu ; Chengjie Zuo ; Milin Zhang ; Van der Spiegel, Jan ; Piazza, Gianluca
Author_Institution :
Dept. of Electr. & Syst. Eng. (ESE), Univ. of Pennsylvania, Philadelphia, PA, USA
Abstract :
A voltage controlled MEMS oscillator (VCMO) fabricated in 65nm CMOS process is proposed in this paper. The piezoelectric aluminum nitride (AlN) Contour-Mode MEMS resonator based oscillator can be operated under multiple frequencies from 204MHz, to 517MHz, to 850MHz. A maximum overall tuning range of 611ppm is achieved at a center frequency of 204MHz. The proposed oscillator operates in the sub-threshold region, resulting in a power consumption of 47μW measured under a 0.55V power supply, which is the lowest reported in literature for an application in the 200MHz range. The measured oscillator phase noise is -77dBc/Hz at 1kHz offset from the 204MHz carrier.
Keywords :
CMOS integrated circuits; III-V semiconductors; UHF oscillators; aluminium compounds; micromechanical devices; phase noise; piezoelectric oscillations; power consumption; power supplies to apparatus; tuning; voltage control; wide band gap semiconductors; AlN; CMOS process; VCMO; contour-mode MEMS-based tunable oscillator; frequency 204 MHz; frequency 517 MHz; frequency 850 MHz; oscillator phase noise; power 47 muW; power consumption; subthreshold region; tuning range; voltage 0.55 V; voltage controlled MEMS oscillator; Capacitors; III-V semiconductor materials; Micromechanical devices; Oscillators; Power demand; Resonant frequency; Tuning;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6572205
