A floating gate graphene FET complementary inverter with symmetrical transfer characteristics

This paper presents the concept of a bilayer graphene transistor using a floating gate to achieve the necessary threshold potential required for symmetrical transfer characteristics in complementary inverters. Using the charge injected into the floating-gate, the threshold voltage of the channel can be controlled. The control of the channel´s electrostatic doping using a floating-gate is exploited to simulate an inverter which shows a symmetrical transfer characteristic centred at an input voltage of V_dd/2.