DocumentCode :
6271
Title :
Bifacial Structures of ZnS Humidity Sensor and Cd-Free CIGS Photovoltaic Cell as a Self-Powered Device
Author :
Han-Ting Hsueh ; Yu-Jen Hsiao ; Yu-De Lin ; Chung-Lin Wu
Author_Institution :
Nat. Appl. Res. Labs., Tainan, Taiwan
Volume :
35
Issue :
12
fYear :
2014
fDate :
Dec. 2014
Firstpage :
1272
Lastpage :
1274
Abstract :
In this letter, a ZnS humidity sensor was integrated with MgF2/ZnS/CuIn1-xGaxSe2 (CIGS)/Mo photovoltaic cell as a self-powered device. Both the ZnS layers of this bifacial device were deposited at the same time by a one-step process. This ZnS layer not only serves as the buffer layer of the CIGS photovoltaic cell on the upside, but is also used as the humidity sensing material on the backside. Under 1-sun illumination, the humidity current increased monotonically from 0.045 to 12.63 nA as we increased the related humidity (RH) from 30% to 95%. At RH 95%, the humidity current decreased from 13.1 to 4.93 nA while the illumination decreased from 1 to 0.1 sun. These results indicate that this device is of practical use as a self-powered humidity sensor.
Keywords :
II-VI semiconductors; copper compounds; humidity sensors; indium compounds; magnesium compounds; molybdenum; photovoltaic cells; solar cells; zinc compounds; MgF2-ZnS-CuIn1-xGaxSe2-Mo; ZnS; bifacial structures; cadmiun-free CIGS photovoltaic cell; humidity current; humidity sensing material; self powered device; self-powered device; self-powered humidity sensor; Current measurement; Electrical resistance measurement; Humidity; Photovoltaic cells; Resistance; Thin films; Zinc compounds; CIGS photovoltaic cell; ZnS; ZnS.; relative humidity;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2361648
Filename :
6932445
Link To Document :
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