Characterization of embedded RF elements on a 3D integrated circuit

A single turn inductor is fabricated on Tier 2 of a three dimensional IC and is de-embedded and characterized up to 5 GHz. A three step de-embedding technique [1] is employed and proved inadequate to characterize a 3DIC passive structure. On-chip standards are fabricated on the same tier to assist shifting the calibration plane inside the stated IC and measure the DUT. Characterizing the device to its true specifications is important because in cases where accuracy is critical, for example oscillators, where parasitic elements might hamper the sustenance of oscillation which proves hazardous for the design success. The goal behind the experiment is to validate the de-embedded inductor in a 3DIC by comparing the results to simulated and measured values and predict the error in advance with the help of a simulated fixture to design reliable RF circuits on a 3DIC.