DocumentCode :
627419
Title :
Time domain envelope characterization of power amplifiers for linear and high efficiency design solutions
Author :
Medrel, Pierre ; Reveyrand, Tibault ; Martin, Andrew ; Bouysse, Philippe ; Nebus, Jean-Michel ; Sombrin, J.
Author_Institution :
XLIM-ΣLIM, Limoges, France
fYear :
2013
fDate :
7-9 April 2013
Firstpage :
1
Lastpage :
6
Abstract :
This paper focuses on the time domain envelope measurements based analysis of power amplifiers in order to improve both linearity and efficiency of microwave transmitters. First of all, a versatile time domain envelope test bench is presented. Then, two applications related to those RF PA measurements are reported. The first application concerns linearity characterization that can be specified in term of Noise Power Ratio (NPR) and Error Vector Magnitude (EVM). Those figures of merit are essential to compute the final bit error rate in a system level simulation tool. A relationship between NPR and EVM is presented and validated by measurements. As a result it can be advantageously used to simplify simulation and measurement procedures for the linearity characterisation of devices and subsystems. The second application is regarding enhancement of the trade-off between linearity and energy efficiency. In order to have a good efficiency, a 10 W class-B GaN Power amplifier is considered. The work presented here, proposes a solution for linearity specifications at large output power back-off thanks to a dynamic gate bias control related to low instantaneous envelope power level. Meanwhile, a dynamic drain bias control handles good efficiency at a constant gain for high instantaneous envelope power level. The measurement-based gate and drain bias trajectory extraction will be fully detailed and take into account GaN dispersive effects such as thermal and trapping effects.
Keywords :
III-V semiconductors; error statistics; gallium compounds; microwave measurement; microwave power amplifiers; wide band gap semiconductors; EVM; GaN; NPR; RF PA measurements; bit error rate; class-B power amplifier; dispersive effects; drain bias trajectory extraction; dynamic drain bias control; dynamic gate bias control; energy efficiency; error vector magnitude; high efficiency design solutions; instantaneous envelope power level; large output power back-ofT; linear design solutions; linearity characterisation; measurement-based gate; microwave transmitters; noise power ratio; power 10 W; power amplifiers; system level simulation tool; thermal effects; time domain envelope measurements; trapping effects; versatile time domain envelope test bench; Energy efficiency; Energy measurement; Gallium nitride; Generators; Logic gates; Power measurement; Q measurement; Class-B; EVM; Instrumentation; NPR; dynamic bias; envelope tracking; linearity; nonlinear circuits; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2013 IEEE 14th Annual
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4673-5536-0
Electronic_ISBN :
978-1-4673-5535-3
Type :
conf
DOI :
10.1109/WAMICON.2013.6572774
Filename :
6572774
Link To Document :
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