An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags

Author

Chasin, Adrian ; Volskiy, V. ; Libois, M. ; Myny, Kris ; Nag, Manoj ; Rockele, Maarten ; Vandenbosch, Guy A. E. ; Genoe, Jan ; Gielen, G. ; Heremans, Paul

Author_Institution

Fac. of Electr. Eng., Univ. of Leuven, Leuven, Belgium

Volume

61

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

3289

Lastpage

3295

Abstract

We present an ultrahigh frequency energy harvester based on low temperature processed a-IGZO (amorphous indium-gallium-zinc oxide) semiconductor on a glass substrate. The harvester is composed of a dipole antenna, matching network, and a double half-wave rectifier and is capable of delivering more than 1 Vdc at a distance of 2 m from the transmitter antenna. In the proposed wireless system, this sensitivity corresponds to 2.75-m distance harvesting at 4-W (36 dBm) emitted power from a base station, which is within EPC regulations. The main element of the rectifier is the high-performance a-IGZO Schottky diode on glass, with a rectification ratio of 107 at ±1 V, a low threshold voltage of 0.6 V and a cutoff frequency of 3 GHz at 0 V bias.

Keywords

Schottky diodes; amorphous semiconductors; dipole antennas; energy harvesting; gallium compounds; indium compounds; radiofrequency identification; radiofrequency power transmission; rectifiers; transmitting antennas; zinc compounds; EPC regulations; amorphous indium-gallium-zinc oxide semiconductor; dipole antenna; double half-wave rectifier; glass substrate; high-performance a-IGZO Schottky diode; integrated a-IGZO UHF energy harvester; low temperature processed a-IGZO; matching network; passive RFID tags; transmitter antenna; ultrahigh frequency energy harvester; Antenna measurements; Frequency measurement; Impedance; Resistance; Schottky diodes; Voltage measurement; Amorphous indium–gallium–zinc oxide (a-IGZO); Amorphous indium-gallium??zinc oxide (a-IGZO); Schottky diode; radio-frequency identification (RFID); thin-film electronics; wireless power transmission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2340462

Filename

6868979