Evaluation of hybrid MRAM/CMOS cells for reconfigurable computing

Author

Torres, L. ; Brum, Raphael M. ; Guillemenet, Y. ; Sassatelli, Gilles ; Cargnini, Luis Vitorio

Author_Institution

LIRMM, Univ. Montpellier 2, Montpellier, France

fYear

2013

fDate

16-19 June 2013

Firstpage

1

Lastpage

6

Abstract

The main objective of this paper is to give an overview of different hybrid MRAM/CMOS cells to use in the context of reconfigurable computing. The way to convert magnetic information into an electrical one is not unique and we propose to compare different kind of hybrid cells. These hybrid cells can be used to define structures as Look-up Table, configuration memory point, Flip-flop and other basic elements needed to define programmable logic. Even if these cells were designed for the TAS (Thermally Assisted Switching) MRAM technology, it is possible to adapt them to more advanced technologies such as STT (Spin Transfer Torque).

Keywords

CMOS integrated circuits; MRAM devices; flip-flops; programmable logic devices; reconfigurable architectures; STT; TAS; configuration memory point; flip-flop; hybrid MRAM-CMOS cell; look-up table; programmable logic; reconfigurable computing; spin transfer torque; thermally assisted switching; CMOS integrated circuits; Inverters; Magnetic tunneling; Noise; Nonvolatile memory; Random access memory; Transistors; Hybrid MRAM/CMOS cells; Reconfigurable Computing; TAS MRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

New Circuits and Systems Conference (NEWCAS), 2013 IEEE 11th International

Conference_Location

Paris

Print_ISBN

978-1-4799-0618-5

Type

conf

DOI

10.1109/NEWCAS.2013.6573676

Filename

6573676