A comparative simulation study of 3D through silicon stack assembly processes

A memory stack on logic 3D IC stack was considered for comparative study of warpage response to two different process choices, namely, Die to Die (D2D) and Package to Die (P2D) assembly. Process and reliability modeling software CielMech, and Commercial Finite Element Analysis (FEA) software ANSYS Mechanical were utilized to simulate thermo-mechanical effects of sequential chip attach, underfilling and encapsulation process steps for the chosen flows. Warpage at room temperature as well as attach temperature after each attach step were compared. Results indicated that underfill, substrate, and mold compound thermal strains play important roles in warpage evolution. Significant differences in the final assembled state warpage was predicted and is attributable to path dependence of warpage evolution.