Title :
New selective wet processing
Author :
Balucani, Marco ; Ciarniello, Danilo ; Nenzi, P. ; Bernardi, D. ; Crescenzi, Rocco ; Kholostov, K.
Author_Institution :
DIET, Sapienza Univ. of Rome, Roma, Italy
Abstract :
A new selective processing technique based on a confined dynamic liquid dropmeniscus is presented. This approach is represented by the localized wet treatment of silicon wafers using dynamic liquid drop that while is in contact with the wafer forms a dynamic liquid meniscus. The main scientific innovation and relevance introduced by this work have been applied to industrial solar cell production and on silicon wafer metal bumps formation for the IC interconnection (i.e. copper pillars). Such new technique allows to touch in specific defined positions the silicon wafer in order to perform any kind of wet processing (e.g. etching, cleaning and/or plating) without the need of any protective resist. To investigate on pendant dynamic liquid drops and dynamic liquid meniscus use of computational fluid dynamic technique (i.e. numerical techniques to accurately predict fluid flows) was followed and is presented. An experimental setup has been built to validate the calculations. Numerical results showed a good agreement with experimental ones. Prototypes heads, using stereo-lithography systems, were developed and localized selective plating without the need of lithography step was performed on silicon.
Keywords :
computational fluid dynamics; confined flow; drops; integrated circuit interconnections; numerical analysis; stereolithography; wafer bonding; wetting; IC interconnection; computational fluid dynamic technique; confined dynamic liquid drop-meniscus; dynamic liquid drop; industrial solar cell production; localized selective plating; localized wet treatment; numerical techniques; pendant dynamic liquid drops; pendant dynamic liquid meniscus; selective wet processing; silicon wafer metal bumps formation; silicon wafers; stereolithography system; Computational fluid dynamics; Copper; Liquids; Mathematical model; Silicon; Solid modeling; Substrates;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-0233-0
DOI :
10.1109/ECTC.2013.6575579